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DMN21D2UFB
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±12
Units
V
V
Continuous Drain Current (Note 6) V GS = 4.5V
Steady
State
t<5s
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 70 ° C
I D
I D
760
610
850
700
mA
mA
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 7)
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
I S
I DM
Symbol
0.8
1.0
Value
A
A
Units
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
T A = 25°C
T A = 70°C
Steady State
t<5s
T A = 25°C
T A = 70°C
Steady State
t<5s
P D
R θ JA
P D
R θ JA
T J, T STG
0.38
0.25
325
244
0.9
0.57
141
106
-55 to 150
W
°C/W
W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV DSS
20
-
-
V
V GS = 0V, I D = 250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T c = 25°C
I DSS
I GSS
-
-
-
-
100
±1
nA
μ A
V DS = 20V, V GS = 0V
V GS = ±10V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V GS(th)
0.4
-
1.0
V
V DS = V GS , I D = 250 μ A
-
0.6
0.99
V GS = 4.5V, I D = 100mA
Static Drain-Source On-Resistance
R DS (ON)
-
-
0.7
0.9
1.2
2.4
Ω
V GS = 2.5V, I D = 50mA
V GS = 1.8V, I D = 20mA
-
1.2
3.0
V GS = 1.5V, I D = 10mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
180
-
-
0.6
-
1.0
mS
V
V DS = 10V, I D = 400mA
V GS = 0V, I S = 150mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge V GS = 4.5V
Total Gate Charge V GS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
27.6
4.0
2.8
0.41
0.93
0.06
0.06
3.5
4.2
19.6
9.8
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
V DS = 16V, V GS = 0V,
f = 1.0MHz
V DS = 10V, I D = 250mA
V DD = 10V, V GS = 4.5V,
R L = 47 ? , R G = 10 ? ,
I D = 200mA
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN21D2UFB
Document number: DS35564 Rev. 5 - 2
2 of 6
www.diodes.com
May 2012
? Diodes Incorporated
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